SK hynix ships HBM4E samples
SK hynix has delivered samples of its 12-layer HBM4E memory to customers, advancing high-bandwidth memory technology for next-generation AI systems.
SK hynix has announced the shipment of samples of its 12-layer HBM4E memory, marking another step in the development of advanced memory solutions for AI and high-performance computing applications.
The next-generation high-bandwidth memory (HBM) device offers data transfer speeds of up to 16Gbps per pin and delivers more than 20% improved power efficiency compared with previous generations, according to the company.
The 12-layer HBM4E achieves a capacity of 48GB through the use of SK hynix's Advanced MR-MUF packaging technology, which enables high-density die stacking while maintaining structural stability.
The company said the technology also improves heat resistance by 17% compared with HBM4, supporting more reliable operation in demanding computing environments.
HBM has become a critical component of AI infrastructure, providing the high-speed memory bandwidth required by advanced AI accelerators and large-scale data centre systems.
SK hynix said it is working closely with customers on qualification and plans to support future mass production of HBM4E as demand for AI memory continues to grow.
