CEA-Leti targets 1µm hybrid bonding at ECTC
CEA-Leti will present seven papers at ECTC 2026, highlighting advances in hybrid bonding, low-temperature processing and heterogeneous integration.
CEA-Leti will present seven papers at ECTC 2026 in Orlando, showcasing new developments in advanced heterogeneous integration and semiconductor packaging.
A key focus is die-to-wafer hybrid bonding with pitches down to 1µm, pushing interconnect scaling as micro-bump technologies approach their limits.
The institute will also present ultra-low-temperature bonding processes, including demonstrations at temperatures as low as 100°C to enable integration of temperature-sensitive materials with CMOS platforms.
Additional work includes fan-out wafer-level packaging, superconducting interconnects for quantum applications, and system-in-package technologies for RF and radar systems.
CEA-Leti said hybrid bonding is becoming a key enabler of next-generation 3D integration as the industry moves toward system-level scaling to support AI and high-performance computing demands.
