Samsung ships HBM4E samples
New high-bandwidth memory generation targets next-wave AI infrastructure with improved bandwidth, capacity and energy efficiency.
Samsung Electronics has begun shipping industry-first samples of its 12-layer HBM4E memory to global customers, marking the latest step in its high-bandwidth memory roadmap for AI and high-performance computing applications.
The HBM4E builds on Samsung’s earlier HBM4 production and is designed to support increasing data processing demands from large-scale AI models and hyperscale infrastructure.
The new generation delivers up to 3.6 TB/s bandwidth per stack and supports pin speeds of up to 16 Gbps, representing more than a 20% performance improvement over its predecessor.
Samsung said the 12-layer configuration increases capacity to 48 GB per stack, with additional variants planned to address different customer requirements.
The company also highlighted improvements in energy efficiency and thermal performance driven by process and packaging optimisations.
The HBM4E integrates advanced DRAM built on Samsung’s 10nm-class process technology alongside a 4nm logic base die developed by Samsung Foundry, reflecting deeper integration between memory, logic and advanced packaging technologies.
According to Samsung, the new architecture is designed to improve performance, power efficiency and manufacturability for AI data centre workloads, where memory bandwidth is becoming a critical system bottleneck.
The company plans to move toward mass production of HBM4E in line with customer demand following the sampling phase.
