Micron samples 256GB DDR5 module
Micron has started sampling a high-capacity DDR5 module aimed at improving performance and power efficiency for AI and HPC data centres.
Micron Technology said its 256GB DDR5 registered DIMM is built on 1-gamma DRAM technology and delivers speeds of up to 9,200 MT/s, offering more than 40% higher performance compared with current production modules.
The module uses advanced packaging techniques including 3D stacking of memory dies and through-silicon vias to increase density and improve power efficiency within standard server architectures.
Micron said a single 256GB module can reduce operating power by more than 40% versus configurations using two 128GB modules, supporting more efficient scaling of AI and HPC workloads.
The company is collaborating with ecosystem partners to validate the module across server platforms ahead of broader deployment.
